Kioxia and Sandisk unveil 9th-generation 2Tb QLC flash with a 4.8Gb/s interface

Kioxia and Sandisk unveiled — not shipped — a 9th-generation 2Tb QLC 3D flash technology with a six-plane architecture and a 4.8Gb/s NAND interface, 33% faster than the 8th-generation part. The strategic move is CBA, which bonds a separately manufactured CMOS wafer to the memory array, letting the two companies advance logic and memory on separate cadences and chase AI storage demand without a full-node capex cycle.

Source: kioxia.com ↗

By leveraging its proven memory cell technology together with the latest CMOS technology, Kioxia is accelerating the development of its 9th-generation flash memory. This approach enables us to deliver high performance while keeping investment costs relatively low.

Hideshi Miyajima, CTO, Kioxia

Why this matters

→ NAND scaling decoupled from logic — accelerates AI storage innovation without full-node capex.
→ 33% speed gain meets exploding demand for dense, fast flash in data centers.
→ CBA architecture lets memory and CMOS advance independently, compressing time-to-market.

Capital-efficient AI storage